Exploring the influence of Al content on the optical and in… — KazNU

Exploring the influence of Al content on the optical and interface properties of HfAlOx mixed gate dielectric thin films and their applications in MOS devices

2024 · Article

Publication year

2024

Source: Journal of Materials Science: Materials in Electronics

DOI: 10.1007/s10854-024-13616-y

Scopus: Open in Scopus

Fields of knowledge

Electrical and Electronic Engineering Electronic, Optical and Magnetic Materials Condensed Matter Physics Atomic and Molecular Physics, and Optics